1 4 - ELM34803AA-N general description features maximum absolute ratings thermal characteristics pin configuration parameter symbol typ. max. unit note maximum junction-to-ambient rja 62.5 c /w parameter symbol limit unit note drain-source voltage vds -30 v gate-source voltage vgs 25 v continuous drain current ta=25c id -8 a ta=70c -6 pulsed drain current idm -40 a 3 avalanche current ias -30 a avalanche energy l=0.1mh eas 45 mj power dissipation ta=25c pd 2.00 w ta=70c 1.28 junction and storage temperature range tj, tstg -55 to 150 c sop-8(top view) pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 4 3 2 1 5 6 7 8 ELM34803AA-N uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=-30v ? id=-8a ? rds(on) < 22m (vgs=-10v) ? rds(on) < 34m (vgs=-4.5v) circuit dual p-channel mosfet s 1 g1 d1 s 2 g2 d2
2 4 - ELM34803AA-N electrical characteristics ta=25 c parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=-250a, vgs=0v -30 v zero gate voltage drain current idss vds=-24v, vgs= 0v -1 a vds=-20v, vgs= 0v, tj=125 c -10 gate-body leakage current igss vds=0v, vgs=25v 100 na gate threshold voltage vgs(th) vds=vgs, id=-250 a -1.0 -1.5 -3.0 v static drain-source on-resistance rds(on) vgs=-10v, id=- 9a 20 22 m 1 vgs =-4. 5v, id =-7 a 29 34 forward transconductance gfs vds =- 5v, id =-9 a 20 s 1 diode forward voltage vsd if =- 9a, vgs=0v -1 v 1 max. body -diode continuous curren is -2 a dynamic parameters input capacitance ciss vgs=0v, vds=-15v, f=1mhz 1480 pf output capacitance coss 334 pf reverse transfer capacitance crss 231 pf gate resistance rg vgs = 0v, vds = 0v, f = 1mhz 2.9 switching parameters total gate charge (10v) qg vgs=-10v, vds=-15v id=-9a 30 nc 2 total gate charge (4.5v) qg 15 nc 2 gate-source charge qgs 5 nc 2 gate-drain charge qgd 6 nc 2 turn - on delay time td(on) vgs=-10v, vds=-15v id-9a, rgen=6 13 ns 2 turn - on rise time tr 8 ns 2 turn - off delay time td(off) 16 ns 2 turn - off fall time tf 12 ns 2 body diode reverse recovery time trr if = -9a, dl/dt=100a/ s 40 ns body diode reverse recovery charge qrr if = -9a, dl/dt=100a/ s 26 nc note : 1. pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%. dual p-channel mosfet
3 4 - typical electrical and thermal characteristics p - channel logic level enhancement mode field effect transistor p2003k v sop - 8 halogen - free & lead - free niko - sem 3 sep -21 -2009 rev 0.9 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50 -25 0 25 50 75 100 125 150 r ds(on) w v gs =-10v i d =-9a r ds(on) w r ds(on) w r ds(on) w r ds(on) w r ds(on) w r ds(on) w r ds(on) w r ds(on) w 0 2 4 6 8 10 0 5 10 15 20 25 30 i d =-9a v ds =-15v 0 0 .5 1 1 .5 2 2 .5 5 1 0 1 5 2 0 2 5 v g s = 3 v 3 0 v g s = 4 .5 v v g s = 7 v v g s = 1 0 v 0 0 v gs = 4.5v 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 v gs = 10v 5 10 15 20 25 0 2 4 6 8 10 0 i d = -9a 0.02 0.04 0.06 0.08 0.10 t j =125 c 0 5 10 15 20 25 t j =-20 c 30 5.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 t j = 25 c v ds = -15v output characteristics - i d , drain - to - source c urrent(a) - v d s , drain - to - source voltage(v) on - resistance vs drain current r ds(on) on - resistance(ohm) - i d , drain - to - source current on - resistance vs gate - to - source r ds(on) on - resistance(ohm) - v g s , gate - to - source voltage(v) on - resistance vs temperature r ds(on) on - resistance(ohm) t j , junction temperature( ? c) transfer characteristics - i d , drain - to - source current(a) - v g s , gate - to - source voltage(v) gate charge characteristics characteristics - v gs , gate - to - source voltage(v) qg , total gate charge ELM34803AA-N dual p-channel mosfet
4 4 - p - channel logic level enhancement mode field effect transistor p2003k v sop - 8 halogen - free & lead - free niko - sem 4 sep -21 -2009 rev 0.9 capacitance characteristic body diode forward voltage vs source current single pluse duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 1.00e-03 1.00e-02 1.00e-01 1.00e+00 1.00e+01 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 note 1.duty cycle, d= t1 / t2 2.r thj a = 62.5 /w 3.t j - t a = p*r thj a (t) 4.r thj a (t) = r(t)*r thj a ciss coss crss 0.00e+00 4.00e+02 8.00e+02 1.20e+03 1.60e+03 2.00e+03 0 5 1 0 1 5 2 0 2 5 3 0 0 10 20 30 40 50 60 70 80 90 100 0.0001 0.001 0.01 0.1 1 10 single pulse r ja = 62.5 c/w t a =25 c 1m s 100us 10s 1s dc 100m s 10m s 0.01 0.1 1 10 100 1000 0.1 1 10 100 note : 1.v gs = 10v 2.t a =25 c 3.r ja = 62.5 c/w 4.single pulse operation in this area is lim ite d by r ds(on) 0.0 0 .2 0.4 0.6 0.8 1 .0 1 .2 1 .0e +01 t j =15 0 c t j =25 c 1 .0 e+0 0 1.0 e-01 1.0 e-0 2 1.0 e-03 1.0e-0 4 1 .0e-0 5 1 .0 e+0 2 c , capacitance(pf) - v d s , drain - to - source voltage(v) - i s , source current(a) - v sd , source - to - drain voltage(v) t 1 , square wave pulse duration[sec] r(t) , n ormalized effective transient thermal resistance - i d , drain current(a) transient thermal response curve safe operating area - v d s , drain - to - source voltage(v) po wer(w) single pulse maximum power dissipation ELM34803AA-N dual p-channel mosfet
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